g eneral d escription the is n - channel mos field effect transistor designed for high current switching applications. rugged e as capability and ultra low r ds(on) is suitable for pwm, load s witching especially for e - bike controller applications. features v ds =70v i d =68a@ v gs = 10 v r ds(on) <8.4m @ v gs = 10 v special d esigned for e - bike c ontroller application u ltra l ow on - resistance h igh uis and uis 100% t est application 48v e - bike c ontroller a pplications hard switched and high frequency circuits unint erruptible power supply table 1. a bsolute maximum r atings (ta=25 ) symbol parameter value unit v ds drain - source voltage ( v gs= 0v) 70 v v gs gate - source voltage ( v ds= 0v) 25 v i d (dc) drain current (dc) at tc=25 68 a i d (dc) drain current (dc) at tc=100 47.6 a i dm (pluse) drain current - continuous@ current - pulsed (note 1 ) 272 a dv/dt peak d iode r ecovery v oltage 30 v /n s p d maximum power dissipation (tc=25 ) 85 w derating factor 0.57 w/ e as single p ulse a valanche e nergy (note 2 ) 3 42 mj t j ,t stg operating junction and storage temperature range - 55 to 175 note s 1. repetitive rating: pulse width limited b y maximum junction temperature 2. e as condition: t j =25 ,v dd =33v,v g =10v,i d =37 a schematic diagram v ds = 70 v i d = 68a r ds(on) = 7m ? ? DK48N75 pb free plating product DK48N75 pb 70v,68a n-channel trench process power mosfet g d s DK48N75 (to-220 heatsink) DK48N75 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/5 rev.05
table 2. t hermal characteristic symbol parameter value unit r ? jc thermal resistance,junction - to - case 1.77 / w table 3. e lectrical characteristics (ta=25 unless otherwi se noted) symbol parameter condition s min typ max unit on/off states bv dss drain - source breakdown voltage v gs =0v i d =250a 70 v i dss zero gate voltage drain current (tc=25 ) v ds = 68 v,v gs =0v 1 a i dss zero gate voltage drain current (tc=125 ) v ds = 68 v,v gs =0v 10 a i gss gate - body leakage current v gs = 25 v,v ds =0v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d =250a 2 4 v r ds(on) drain - source on - state resistance v gs = 10 v, i d =4 0 a 7 8.4 m dynamic characteristics g fs forward transconductanc e v ds = 10 v,i d = 15 a 18 s c iss input capacitance 3006 p f c oss output capacitance 360 p f c rss reverse transfer capacitance v ds = 25 v,v gs =0v, f =1.0mhz 167 p f q g total gate charge 64 nc q gs gate - source charge 13.4 nc q g d gate - drain charge v ds = 50 v,i d = 40 a, v gs = 10 v 26.2 nc s witching t imes t d(on) turn - on delay time 9 ns t r turn - on rise time 11 ns t d(off) turn - off delay time 19 ns t f turn - off fall time v dd = 3 0v,i d = 2 a ,r l =15 v gs = 10 v,r g = 2.5 23 ns source - d rain d iode characteristics i sd source - drain current(body diode) 68 a i sdm pulsed source - drain current(body diod e) 272 a v sd forward on voltage (note 1 ) t j =25 ,i sd =40a,v gs =0v 0.79 0.95 v t rr reverse recovery time (note 1 ) 34 ns q rr reverse recovery charge (note 1 ) t j =25 ,i f =75a di/dt=100a/ s 69 nc t on forward turn - on time intrinsic turn - on time is negligib le(turn - on is dominated by l s +l d ) note s 1 . pulse test: pulse width 300s, duty cycle 1.5 % , r g =25 , starting t j =25 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/5 rev.05 ? DK48N75
test c i r c uit 1 e a s t e s t circuits 2 gate c h a rge t est cir c uit: 3 s w itch time test circui t ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/5 rev.05 ? DK48N75
typical electrical and t h ermal charac t eristics (curves) i d (a) v ds (volts) i s - source current (a) v sd (volts) figure3. output c haracteristics figure4. transfer characteristics i d (a) v ds (volts) figure5. static d rain - source o n r esistance figure6. r ds(on) vs junction temperature r ds(on) (m ) i d (a ) v gs (volts) figure1. safe o perating area figure2. source - drain diode forward voltage i d (a) r ds(on) t c = 2 5 10us 1ms 10m dc ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 4/5 rev.05 ? DK48N75
figure7. b v dss vs junction temperature figur e8. v gs(th) vs junction temperature temperature temperature temperature figure9. gate c harge w aveforms figure10. capacitance figure11. normalized maximum tra nsient thermal impedance square w ave pluse dur a tion(sec) r (t), normalized effective transient thermal impedance c capacitance (pf) qg gate charge (nc) v gs (volts) v ds drain - source voltage (v) ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 5/5 rev.05 ? DK48N75
|
